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Advantech 16GB DDR5-5600 288Pin 2GX8 1.1V Unbuffered Hynix Chip Hynix Original Chip. Increased Banks and Burst Length. DDR5 5.6GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
8GB ECC-DDR3-1600 1.35V&1.5V 512X8 SAM DDR3-1600 ECC. 240-Pin. 512MX8. Samsung Chip.
8G R-DDR3-1600 1.35V&1.5V 512X8 SAM DDR3-1600 ECC Registered. 240-Pin. 512MX8. Samsung Chip.
Advantech 32GB SO-DIMM DDR5-5600 262Pin 2GX8 1.1V Unbuffered Hynix Chip Hynix Original Chip. Increased Banks and Burst Length. DDR5 5.6GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
Advantech 16GB SO-DIMM DDR5-5600 262Pin 2GX8 1.1V Unbuffered Hynix Chip Hynix Original Chip. Increased Banks and Burst Length. DDR5 5.6GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
32GB SO-DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
32G ECC-SODDR4 3200 1.2V 2GbX8 SAM 32GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. ECC.
16GB R-DDR5 4800 R-Dimm 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
8G ECC SO-DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
8G SO-DDR3-1600 512X8 1.35V HYX DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Hynix Chip.
8G ECC SO-DDR3-1600 512X8 1.35V&1.5V SAM DDR3-1600 ECC SO-DIMM. 204-Pin. 512MX8. Samsung Chip.
8G ECC DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
