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16G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. 100% tested for stability, compatibility and performance.
4G SO-DDR4-3200 512GbX16 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. wide temperatures from -40° to 85°C.
8G DDR4 3200 512x8 REG VLP -40~85℃ SAM DDR4-3200 Registered ECC DIMM. Very Low Profile. Wide temperature. 1.2V Power Consumption. Low-power auto self refresh (LPASR).
8G SO-DDR3-1600 512X8 1.35V SAM -40~85℃ 30u" Gold Plating Thickness. Anti-sulfurization resistance. Samsung original chip. Wide Temp. -40C to +85C. 100% tested for stability, compatibility and performance.
4G SO-DDR3-1600 512X8 1.35V SAM -40~85℃ 30u" Gold Plating Thickness. Anti-sulfurization resistance. Samsung original chip. Wide Temp. -40C to +85C. 100% tested for stability, compatibility and performance.
4G DDR4 2400 512x8 REG VLP -40~85C SAM DDR4-2400 Registered DIMM. Very Low Profile. Wide temperature. 30μ" gold plating thickness. 1.2V Power Consumption. Provides better reliability, availability and serviceability (RAS) and improves data integrity.
