8G SO-DDR3-1600 512X8 1,35V HYX DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Hynix-Chip.
8G ECC SO-DDR3-1600 512X8 1,35V&1,5V SAM DDR3-1600 ECC SO-DIMM. 204-Pin. 512MX8. Samsung Chip.
1G SO-DDR3-1333 128X8 1,5V SAM(G) DDR3-1333 SO-DIMM. 204-Pin. 128MX8. Samsung Chip.
1G SO-DDR3-1600 128X16 1.35V SAM DDR3 1600Mhz ungepuffert SO-DIMM. 30μ" Dicke der Vergoldung. 1,35 V Stromverbrauch. Samsung Original-Chip.
4G SO-DDR3-1600 512X8 1.35V HYX DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Hynix-Chip.
(DEL21)4G SO-DDR3-1600 512X8 1.35V MIC DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Micron Chip.
