SO-DIMM DDR3 Memory

4G SO-DDR3-1600 512X8 1.35V 1.5V SAM(G) DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Samsung Chip.

4G SO-DDR3-1600 512X8 1.35V 1.5V SAM DDR3 1600Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness . 1.35V power consumption. Samsung original chip.

8G SO-DDR3-1600 512X8 1.35V 1.5V SAM(G) DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Samsung Chip.

2G SO-DDR3-1600 256X8 1.35V SAM(G) DDR3-1600 SO-DIMM. 204-Pin. 256MX8. Samsung Chip.

4G SO-DDR3-1600 256X8 1.35V 1.5V SAM DDR3-1600 SO-DIMM. 204-Pin. 256MX8. Samsung Chip.

2G SO-DDR3-1600 256X8 1.35V 1.5V SAM DDR3 1600Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.35V power consumption. Samsung original chip.

8G ECC SO-DDR3-1600 512X8 1.35V&1.5V SAM DDR3-1600 ECC SO-DIMM. 204-Pin. 512MX8. Samsung Chip.

8G SO-DDR3-1600 512X8 1.35V HYX DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Hynix Chip.

1G SO-DDR3-1333 128X8 1.5V SAM(G) DDR3-1333 SO-DIMM. 204-Pin. 128MX8. Samsung Chip.

1G SO-DDR3-1600 128X16 1.35V SAM DDR3 1600Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.35V power consumption. Samsung original chip.

2G SO-DDR3-1600 256X16 1.35V&1.5V SAM Samsung DRAM Chip. DDR3 Spec . Unbuffered DIMM. 30μ" gold plating thickness. 2GB.

4G ECC SO-DDR3-1600 512X8 1.35V SAM DDR3-1600 ECC SO-DIMM. 204-Pin. 512MX8. Samsung Chip.

4G SO-DDR3-1600 512X8 1.35V HYX DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Hynix Chip.

(DEL21)4G SO-DDR3-1600 512X8 1.35V MIC DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Micron Chip.

8G SO-DDR3-1600 512X8 1.35V 1.5V SAM DDR3 1600Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness . 1.35V power consumption. Samsung original chip.