SODIMM DDR4 2666 8GB 1Gbx8 (0-85C)
Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
SODIMM DDR4 2666 16GB 1Gbx8 (0-85C)
Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
SODIMM DDR4 3200 8GB 1Gbx8 (0-85C)
Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
SODIMM DDR4 3200 Semi 16GB 1Gx8 (0-85) SAM
Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
SODIMM ECC DDR4 3200 32GB 2Gx8 (-40-85) SAM
260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
SODIMM ECC DDR4 3200 32GB 2Gx8 (0-85) SAM
260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
SODIMM ECC DDR4 3200 8GB 1Gx8 (-40-85) SAM
260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
SODIMM ECC DDR4 3200 16GB 1Gx8 (-40-85) SAM
260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
260pin SODIMM-D4-2666 8G 1Gbx8 HYNX 0-85
Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
260pin SODIMM-D4-2666 16G 1Gbx8 HYNX 0-85
Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
SODIMM ECC DDR4 3200 8GB 1Gx8 (0-85) SAM
260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
SODIMM ECC DDR4 3200 16GB 1Gx8 (0-85) SAM
260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
SODIMM DDR4 3200 8GB (0-85) SAM-G
Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
SODIMM DDR4 3200 16GB (0-85) SAM-G
Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
260pin ECC SODIMM-D4-2666 32G SAM 2Gbx8, 0-85
260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
Rugged ECC-D4 2666 32GB SAM 2Gx8 , -40-85
Robust PCB designed with Mounting Hole with Military MIL-810G verified. Extreme Data Transfer rate up to 3200 MT/s. Capacity: up to 32GB. Wide Temperature supported: -40°C ~ 85 °C. Original IC chip (Samsung/Hynix).
ECC SODIMM DDR4 2666 8GB 1GX8 (0-85)
260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
ECC SODIMM DDR4 2666 8GB 1Gx8 (-40-85) SAM
260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
ECC SODIMM DDR4 2666 16GB 1Gx8 (-40-85) SAM
260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
SODIMM(ECC) DDR4 2133 16GB (-40-85)
260pin SODIMM ECC DIMM. Data transfer rate: 2133/2400/2666 MT/s
Capacity: 2GB~16GB. Original IC chip (Samsung/Hynix)
. ECC function support. Wide temperature range support -40oC~85oC.
ECC SO D4 2400 16GB (-40-85) SAM
260pin SODIMM ECC DIMM. Data transfer rate: 2133/2400/2666 MT/s
Capacity: 2GB~16GB. Original IC chip (Samsung/Hynix)
. ECC function support. Wide temperature range support -40oC~85oC.
SODIMM(ECC) DDR4 2400 16GB 1G*8 (0-85)
260pin SODIMM ECC DIMM. Data transfer rate: 2133/2400/2666 MT/s
Capacity: 2GB~16GB. Original IC chip (Samsung/Hynix)
. ECC function support. Wide temperature range support -40oC~85oC.
Rugged SODIMM DDR4 2666 16GB Hynix 1Gx8, 0-85C
Robust PCB designed with Mounting Hole with Military MIL-810G verified. Extreme Data Transfer rate up to 3200 MT/s. Capacity: up to 32GB. Wide Temperature supported: 0°C ~ 85 °C. Original IC chip (Samsung/Hynix).
SODIMM DDR4 2666 32GB 2Gbx8 (0-85C)
Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
260pin ECC SO-D4-2666 32G 2Gbx8, -40-85
260pin SODIMM ECC DIMM. Data transfer rate: 2133/2400/2666 MT/s
Capacity: 2GB~16GB. Original IC chip (Samsung/Hynix)
. ECC function support. Wide temperature range support -40oC~85oC.