16GB DDR4 SODIMM-3200 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. Unbuffered.
32G SO-DDR4-3200 2GX8 1.2V SAM -20~85℃ SAM Original Chip. Industrial Design for Improved Reliability. PCB: 30μ gold finger. Anti-sulfuration. Semi Wide-temp Support -20~85℃.
32GB DDR4 SODIMM-3200 2GbX8 SAM 32GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. Unbuffered.
32G ECC-SODDR4 3200 1.2V 2GbX8 SAM 32GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. ECC.
16G SO-DDR4-3200 1GX8 1.2V SAM -20~85℃ SAM Original Chip. Industrial Design for Improved Reliability. PCB: 30μ gold finger. Anti-sulfuration. Semi Wide-temp Support -20~85℃.
8G SO-DDR4-3200 1GX8 1.2V SAM -20~85℃ SAM Original Chip. Industrial Design for Improved Reliability. PCB: 30μ gold finger. Anti-sulfuration. Semi Wide-temp Support -20~85℃.
4G SO-DDR4-3200 512X16 1.2V SAM -20~85℃ SAM Original Chip. Industrial Design for Improved Reliability. PCB: 30μ gold finger . Anti-sulfuration . Semi Wide-temp Support -20~85℃.
16G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. wide temperatures from -40° to 85°C.
32G SO-DDR4-3200 2GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. 100% tested for stability, compatibility and performance.
16G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. 100% tested for stability, compatibility and performance.
8G ECC SO-DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
16G ECC SO-DDR4-2400 1GX8 1.2V HYX DDR4 2400 ECC SO DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Hynix Original Chip.
(DEL22)16G ECC SO-DDR4-2400 1GX8 1.2V SA DDR4 2400 ECC SO-DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
16G ECC SO-DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
16G ECC-SODDR4-3200 1.2V 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. ECC.
16G SO-DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.
16G SO-DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.
32G SO-DDR4-2666 2GbX8 1.2V HYX Increased Bandwidth, up to 2600 Mbps. Industrial Stand 30u Gold Plating. Enhanced Power Efficiency. RoHS compliant & Complies with JEDEC standards. Up to 32GB .
32G SO-DDR4-2666 2GbX8 1.2V SAM Increased Bandwidth, up to 2600 Mbps. Industrial Stand 30u Gold Plating. Enhanced Power Efficiency. RoHS compliant & Complies with JEDEC standards. Up to 32GB .
(DEL21)Micron 8GB DDR4 SODIMM 3200Mhz 1G DDR4 3200Mhz Unbuffered DIMM. SODIMM 260pin / UDIMM 288pin. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
16G SO-DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.
(DEL22)4G ECC SO-DDR4-2400 512X8 1.2V SA DDR4 2400 ECC SO-DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
4G ECC SO-DDR4-2666 512X8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
4G SO-DDR4-2400 512X16 1.2V HYX DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.
4G SO-DDR4-2400 512X8 1.2V SAM DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.
4G SO-DDR4-2400 512X16 1.2V SAM Samsung DRAM Chip. DDR4 Spec . Unbuffered DIMM. 30μ" gold plating thickness. 4GB.
4G SO-DDR4-2666 512MbX8 1.2V SAM DDR4 2666Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.
8G ECC-SODDR4-3200 1.2V 1GbX8 SAM 8GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. ECC.
8G SO-DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.
8G SO-DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.
8G SO-DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.