16GB DDR4 SODIMM-3200 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. Unbuffered.
€58
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SO-DIMM DDR4 Memory
4G SO-DDR4-3200 512X16 1.2V SAM -20~85℃ SAM Original Chip. Industrial Design for Improved Reliability. PCB: 30μ gold finger . Anti-sulfuration . Semi Wide-temp Support -20~85℃.
€19
- On enquiry
16G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. wide temperatures from -40° to 85°C.
€69
- On enquiry
32G SO-DDR4-3200 2GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. 100% tested for stability, compatibility and performance.
€148
- On enquiry
32G ECC-SODDR4 3200 1.2V 2GbX8 SAM 32GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. ECC.
€136
- On enquiry
16G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. 100% tested for stability, compatibility and performance.
€81
- On enquiry
8G ECC SO-DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
€45
- On enquiry
16G ECC SO-DDR4-2400 1GX8 1.2V HYX DDR4 2400 ECC SO DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Hynix Original Chip.
€91
- On enquiry
(DEL22)16G ECC SO-DDR4-2400 1GX8 1.2V SA DDR4 2400 ECC SO-DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
€155
- On enquiry
16G ECC SO-DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
€117
- On enquiry
16G ECC-SODDR4-3200 1.2V 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. ECC.
€75
- On enquiry
16G SO-DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.
€98
- On enquiry
16G SO-DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.
€103
- On enquiry
32G SO-DDR4-2666 2GbX8 1.2V HYX Increased Bandwidth, up to 2600 Mbps. Industrial Stand 30u Gold Plating. Enhanced Power Efficiency. RoHS compliant & Complies with JEDEC standards. Up to 32GB .
€155
- On enquiry
32G SO-DDR4-2666 2GbX8 1.2V SAM Increased Bandwidth, up to 2600 Mbps. Industrial Stand 30u Gold Plating. Enhanced Power Efficiency. RoHS compliant & Complies with JEDEC standards. Up to 32GB .
€178
- On enquiry
32GB DDR4 SODIMM-3200 2GbX8 SAM 32GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. Unbuffered.
€110
- On enquiry
(DEL21)Micron 8GB DDR4 SODIMM 3200Mhz 1G DDR4 3200Mhz Unbuffered DIMM. SODIMM 260pin / UDIMM 288pin. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
€59
- On enquiry
16G SO-DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.
€91
- On enquiry
(DEL22)4G ECC SO-DDR4-2400 512X8 1.2V SA DDR4 2400 ECC SO-DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
€69
- On enquiry
4G ECC SO-DDR4-2666 512X8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
€34
- On enquiry
4G SO-DDR4-2400 512X16 1.2V HYX DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.
€25
- On enquiry
4G SO-DDR4-2400 512X8 1.2V SAM DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.
€52
- On enquiry
4G SO-DDR4-2400 512X16 1.2V SAM Samsung DRAM Chip. DDR4 Spec . Unbuffered DIMM. 30μ" gold plating thickness. 4GB.
€35
- On enquiry
4G SO-DDR4-2666 512MbX8 1.2V SAM DDR4 2666Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.
€30
- On enquiry
8G ECC-SODDR4-3200 1.2V 1GbX8 SAM 8GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. ECC.
€41
- On enquiry
8G SO-DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.
€43
- On enquiry
8G SO-DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.
€52
- On enquiry
8G SO-DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.
€35
- On enquiry