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SO-DIMM DDR4 Memory

SO-DIMM DDR4 Memory

There are 25 products.

Showing 1-25 of 25 item(s)

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Advantech AQD-SD4U8GN32-SE

8GB DDR4 SODIMM-3200 1GbX8 SAM DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. 100% tested for stability, compatibility and performance.

Advantech AQD-SD4U16N24-HE

16G SO-DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.

Advantech AQD-SD4U16GN32-SE

16GB DDR4 SODIMM-3200 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. Unbuffered.

Advantech AQD-SD4U8GN26-SE

8G SO-DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.

Advantech AQD-SD4U4GN24-SG

4G SO-DDR4-2400 512X8 1.2V SAM DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.

Advantech AQD-SD4U8GN24-SE

8G SO-DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.

Advantech AQD-SD4U16N24-SE

16G SO-DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.

Advantech AQD-SD4U4GN24-SP

4G SO-DDR4-2400 512X16 1.2V SAM Samsung DRAM Chip. DDR4 Spec . Unbuffered DIMM. 30μ" gold plating thickness. 4GB.

Advantech AQD-SD4U32GN32-SB

32GB DDR4 SODIMM-3200 2GbX8 SAM 32GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. Unbuffered.

Advantech AQD-SD4U4GN24-HP

4G SO-DDR4-2400 512X16 1.2V HYX DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.

Advantech AQD-SD4U4GN32-SP

4GB DDR4 SODIMM-3200 512Mbx16 SAM DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. 100% tested for stability, compatibility and performance.

  • On enquiry
Advantech AQD-SD4U8GE26-SE

8G ECC SO-DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

  • On enquiry
Advantech AQD-SD4U16E24-HE

16G ECC SO-DDR4-2400 1GX8 1.2V HYX DDR4 2400 ECC SO DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Hynix Original Chip.

  • On enquiry
Advantech AQD-SD4U16E24-SE

(DEL22)16G ECC SO-DDR4-2400 1GX8 1.2V SA DDR4 2400 ECC SO-DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

  • On enquiry
Advantech AQD-SD4U16E26-SE

16G ECC SO-DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

  • On enquiry
Advantech AQD-SD4U16GE32-SE

16G ECC-SODDR4-3200 1.2V 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. ECC.

  • On enquiry
Advantech AQD-SD4U16N26-SE

16G SO-DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.

  • On enquiry
Advantech AQD-SD4U32GN26-HB

32G SO-DDR4-2666 2GbX8 1.2V HYX Increased Bandwidth, up to 2600 Mbps. Industrial Stand 30u Gold Plating. Enhanced Power Efficiency. RoHS compliant & Complies with JEDEC standards. Up to 32GB .

  • On enquiry
Advantech AQD-SD4U32GN26-SB

32G SO-DDR4-2666 2GbX8 1.2V SAM Increased Bandwidth, up to 2600 Mbps. Industrial Stand 30u Gold Plating. Enhanced Power Efficiency. RoHS compliant & Complies with JEDEC standards. Up to 32GB .

  • On enquiry
Advantech 96SD4-8G3200NN-MI

(DEL21)Micron 8GB DDR4 SODIMM 3200Mhz 1G DDR4 3200Mhz Unbuffered DIMM. SODIMM 260pin / UDIMM 288pin. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.

  • On enquiry
Advantech AQD-SD4U4GE24-SG

(DEL22)4G ECC SO-DDR4-2400 512X8 1.2V SA DDR4 2400 ECC SO-DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

  • On enquiry
Advantech AQD-SD4U4GE26-SG

4G ECC SO-DDR4-2666 512X8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

  • On enquiry
Advantech AQD-SD4U4GN26-SG

4G SO-DDR4-2666 512MbX8 1.2V SAM DDR4 2666Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.

  • On enquiry
Advantech AQD-SD4U8GE32-SE

8G ECC-SODDR4-3200 1.2V 1GbX8 SAM 8GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. ECC.

  • On enquiry
Advantech AQD-SD4U8GN24-HE

8G SO-DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.

  • On enquiry