SODIMM DDR5 5600 16GB 2Gx8 Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 5600 32GB 2Gx8 Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 5600 8GB 1Gx16 Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 5600 16GB 2Gx8 Samsung(-40~95) Data Transfer Rate: 4800/5600 MT/s. Capacity : 8GB/16GB/32GB. Original Samsung IC adopted. Independent Power Management IC build-in. Operating Temperature: -40°C ~ 95°C.
SODIMM DDR5 5600 32GB 2Gx8 Samsung(-40~95) Data Transfer Rate: 4800/5600 MT/s. Capacity : 8GB/16GB/32GB. Original Samsung IC adopted. Independent Power Management IC build-in. Operating Temperature: -40°C ~ 95°C.
SODIMM DDR5 5600 8GB 1Gx16 (0-95) Hynix Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 4800 16GB 2Gx8 (0-95) Hynix Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 5600 32GB 2Gx8 (0-95) Hynix Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 5600 8GB 1Gx16 (-40-85) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8GB/16GB/32GB. Original Samsung/Hynix IC adopted. Independent Power Management IC build-in. Operating Temperature: -40°C ~ 95°C.
SODIMM DDR5 4800 32GB 2Gx8 (0-95) Hynix Data Transfer Rate: 4800/5600/6400 MT/s. Capacity : 8/16/24/32/48/64GB. Original Samsung/Hynix/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 5600 16GB 2Gx8 (0-95) Hynix Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 6400 48GB 3Gx8 (-25-95) Hynix Data Transfer Rate: 6400 MT/s. Capacity : 8/16/32/48/64GB. Original Hynix IC adopted. On-Die ECC function support. Independent Power Management IC build-in. CKD& TVS Diode on Module. Operating Temperature: -25°C ~ 95°C.
SODIMM DDR5 6400 64GB 4Gx8 (-25-95) Hynix Data Transfer Rate: 6400 MT/s. Capacity : 8/16/32/48/64GB. Original Hynix IC adopted. On-Die ECC function support. Independent Power Management IC build-in. CKD& TVS Diode on Module. Operating Temperature: -25°C ~ 95°C.
SODIMM DDR5 6400 16GB 2Gx8 (-25-95) Hynix Data Transfer Rate: 6400 MT/s. Capacity : 8/16/32/48/64GB. Original Hynix IC adopted. On-Die ECC function support. Independent Power Management IC build-in. CKD& TVS Diode on Module. Operating Temperature: -25°C ~ 95°C.
SODIMM DDR5 6400 32GB 2Gx8 (-25-95) Hynix Data Transfer Rate: 6400 MT/s. Capacity : 8/16/32/48/64GB. Original Hynix IC adopted. On-Die ECC function support. Independent Power Management IC build-in. CKD& TVS Diode on Module. Operating Temperature: -25°C ~ 95°C.
SODIMM DDR5 6400 8GB 1Gx16 (-25-95) Hynix Data Transfer Rate: 6400 MT/s. Capacity : 8/16/32/48/64GB. Original Hynix IC adopted. On-Die ECC function support. Independent Power Management IC build-in. CKD& TVS Diode on Module. Operating Temperature: -25°C ~ 95°C.
SODIMM DDR5 5600 32GB 2Gx8 (-40-85) Hynix Data Transfer Rate: 4800/5600 MT/s. Capacity : 8GB/16GB/32GB. Original Samsung/Hynix IC adopted. Independent Power Management IC build-in. Operating Temperature: -40°C ~ 95°C.
SODIMM DDR5 5600 8GB 1Gx16 (-40-85) Hynix Data Transfer Rate: 4800/5600 MT/s. Capacity : 8GB/16GB/32GB. Original Samsung/Hynix IC adopted. Independent Power Management IC build-in. Operating Temperature: -40°C ~ 95°C.
SODIMM DDR5 5600 16GB 2Gx8 (-40-85) Hynix Data Transfer Rate: 4800/5600 MT/s. Capacity : 8GB/16GB/32GB. Original Samsung/Hynix IC adopted. Independent Power Management IC build-in. Operating Temperature: -40°C ~ 95°C.
SODIMM DDR5 4800 8GB 1Gx16 (0-95) Hynix Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 5600 48GB 3Gx8 Micron Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 4800 8GB 1Gx16 (0-85) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 4800 32GB 2Gx8 (0-85) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 4800 8GB 1Gx16 (-40-85) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8GB/16GB/32GB. Original Samsung IC adopted. Independent Power Management IC build-in. Operating Temperature: -40°C ~ 95°C.
SODIMM DDR5 4800 16GB 2Gx8 (-40-85) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8GB/16GB/32GB. Original Samsung IC adopted. Independent Power Management IC build-in. Operating Temperature: -40°C ~ 95°C.
SODIMM DDR5 4800 8GB 1Gx16 (0-95) Micron Data Transfer Rate: 4800 MT/s. Capacity : 8GB/16GB/32GB. Original Micron/Samsung IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 4800 32GB 2Gx8 (0-85) Micron Data Transfer Rate: 4800 MT/s. Capacity : 16GB/32GB. Original Micron/Samsung IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 85°C.
SODIMM DDR5 4800 16GB 2Gx8 (0-95) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 4800 16GB 2Gx8 (0-85) Micron Data Transfer Rate: 4800 MT/s. Capacity : 16GB/32GB. Original Micron/Samsung IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 85°C.
SODIMM DDR5 4800 32GB 2Gx8 (-40-85) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8GB/16GB/32GB. Original Samsung IC adopted. Independent Power Management IC build-in. Operating Temperature: -40°C ~ 95°C.