16GB ECC DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
Advantech 16GB DDR5-5600 288Pin 2GX8 1.1V Unbuffered Hynix Chip Hynix Original Chip. Increased Banks and Burst Length. DDR5 5.6GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
Advantech 8G DDR5-4800 288Pin 1GX16 1.1V Unbuffered Samsung Chip Samsung Original Chip. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
Advantech 16G DDR5-4800 288Pin 2GX8 1.1V Unbuffered Samsung Chip Samsung Original Chip. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
Advantech 8GB DDR5-5600 288Pin 1GX16 1.1V Unbuffered Hynix Chip Hynix Original Chip. Increased Banks and Burst Length. DDR5 5.6GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
32GB R-DDR5 5600 R-Dimm 2GX8 1.1V SAM SAM Original Chip. Industrial Design for Improved Reliability. Compatible with server platform. 30u” golden finger. Operating Temperature: 0°C ~ 85°C.
Advantech 32G DDR5-4800 288Pin 2GX8 1.1V Unbuffered Samsung Chip Samsung Original Chip. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
Advantech 32GB DDR5-5600 288Pin 2GX8 1.1V Unbuffered Hynix Chip Hynix Original Chip. Increased Banks and Burst Length. DDR5 5.6GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
16GB R-DDR5 4800 R-Dimm 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
32GB R-DDR5 4800 R-Dimm 2GX8 1.1V SAM Samsung Original Chip. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
32GB ECC DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
