DRAM Memory Module

Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Samsung Chip.

4G DDR3-1600 512X8 1.35V 1.5V SAM(G) DDR3-1600. 240-Pin. 512MX8. Samsung Chip.

Advantech 16GB SO-DIMM DDR5-4800 262Pin 2GX8 1.1V Unbuffered Samsung Chip Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip DDR3 1600Mhz Unbuffered DIMM. 30μ" gold plating thickness. 1.35V power consumption. Samsung original chip.

Advantech 32GB SO-DIMM DDR5-4800 262Pin 2Gx8 1.1V Unbuffered Samsung Chip Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

16GB ECC DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

16GB DDR4 SODIMM-3200 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. Unbuffered.

16GB DDR4 DIMM-3200 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. Unbuffered.

Micron 32G DDR4 3200 288PIN 2GX4 REG 1.2V DDR4-3200 Registered ECC DIMM. 1.2V power consumption. Supports ECC error detection and correction. Data bus inversion (DBI) for data bus. Low-power auto self refresh (LPASR).

Advantech 16GB DDR5-5600 288Pin 2GX8 1.1V Unbuffered Hynix Chip Hynix Original Chip. Increased Banks and Burst Length. DDR5 5.6GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

Advantech 16GB SO-DIMM DDR5-5600 262Pin 2GX8 1.1V Unbuffered Hynix Chip Hynix Original Chip. Increased Banks and Burst Length. DDR5 5.6GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

Advantech 8G DDR5-4800 288Pin 1GX16 1.1V Unbuffered Samsung Chip Samsung Original Chip. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

4G DDR4-2666 512MbX8 1.2V SAM DDR4 2666Mhz Unbuffered UDIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.

Advantech 32GB SO-DIMM DDR5-5600 262Pin 2GX8 1.1V Unbuffered Hynix Chip Hynix Original Chip. Increased Banks and Burst Length. DDR5 5.6GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

Advantech 8GB SO-DIMM DDR5-5600 262Pin 1GX16 1.1V Unbuffered Hynix Chip Hynix Original Chip. Increased Banks and Burst Length. DDR5 5.6GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

Advantech 16G DDR5-4800 288Pin 2GX8 1.1V Unbuffered Samsung Chip Samsung Original Chip. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

(DEL21)4G DDR3-1600 512X8 1.35V MIC DDR3-1600. 240-Pin. 512MX8. Micron Chip.

32GB ECC SO-DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

Advantech 8GB DDR5-5600 288Pin 1GX16 1.1V Unbuffered Hynix Chip Hynix Original Chip. Increased Banks and Burst Length. DDR5 5.6GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

32G DDR4-2666 2GbX8 1.2V HYX Increased Bandwidth, up to 2600 Mbps. Industrial Stand 30u Gold Plating. Enhanced Power Efficiency. RoHS compliant & Complies with JEDEC standards. Up to 32GB.

(DEL21)Micron 4GB DDR4 UDIMM 3200Mhz 512 DDR4 3200Mhz Unbuffered DIMM. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.

4G SO-DDR4-3200 512X16 1.2V SAM -20~85℃ SAM Original Chip. Industrial Design for Improved Reliability. PCB: 30μ gold finger . Anti-sulfuration . Semi Wide-temp Support -20~85℃.

32GB R-DDR5 5600 R-Dimm 2GX8 1.1V SAM SAM Original Chip. Industrial Design for Improved Reliability. Compatible with server platform. 30u” golden finger. Operating Temperature: 0°C ~ 85°C.

16G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. wide temperatures from -40° to 85°C.

Advantech 32G DDR5-4800 288Pin 2GX8 1.1V Unbuffered Samsung Chip Samsung Original Chip. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

32G SO-DDR4-3200 2GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. 100% tested for stability, compatibility and performance.

Advantech 32GB DDR5-5600 288Pin 2GX8 1.1V Unbuffered Hynix Chip Hynix Original Chip. Increased Banks and Burst Length. DDR5 5.6GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

32G ECC-SODDR4 3200 1.2V 2GbX8 SAM 32GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. ECC.

16G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. 100% tested for stability, compatibility and performance.

16GB R-DDR5 4800 R-Dimm 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

Advantech 8GB SO-DIMM DDR5-4800 262Pin 1Gx16 1.1V Unbuffered Samsung Chip Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

8G DDR4 3200 512x8 REG VLP -40~85℃ SAM DDR4-3200 Registered ECC DIMM. Very Low Profile. Wide temperature. 1.2V Power Consumption. Low-power auto self refresh (LPASR).

16GB ECC SO-DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

32GB R-DDR5 4800 R-Dimm 2GX8 1.1V SAM Samsung Original Chip. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

32GB ECC DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip DDR3-1600. 240-Pin. 512MX8. Samsung Chip.

Micron 8G DDR4 3200 288PIN 1GbX8 REG 1.2V DDR4-3200 Registered ECC DIMM. 1.2V power consumption. Supports ECC error detection and correction. Data bus inversion (DBI) for data bus. Low-power auto self refresh (LPASR).

Micron 64G DDR4 3200 288PIN 16Gbx4 REG Micron DRAM Chip. DDR4. Registered DIMM. Gold edge contacts. 64GB.

Micron 16G DDR4 3200 288PIN 2GbX8 REG 1.2V DDR4-3200 Registered ECC DIMM. 1.2V power consumption. Supports ECC error detection and correction. Data bus inversion (DBI) for data bus. Low-power auto self refresh (LPASR).

Micron 8GB DDR4 UDIMM 3200Mhz 1Gbx8 1.2V DDR4 3200Mhz Unbuffered DIMM. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.

8G ECC SO-DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

8G SO-DDR3-1600 512X8 1.35V SAM -40~85℃ 30u" Gold Plating Thickness. Anti-sulfurization resistance. Samsung original chip. Wide Temp. -40C to +85C. 100% tested for stability, compatibility and performance.

8G SO-DDR3-1600 512X8 1.35V HYX DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Hynix Chip.

8G ECC SO-DDR3-1600 512X8 1.35V&1.5V SAM DDR3-1600 ECC SO-DIMM. 204-Pin. 512MX8. Samsung Chip.

8G ECC-DDR4-3200 1.2V 1GX8 SAM 8GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. ECC.

8G ECC DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

4G R-DDR4-2400 1.2V 512X8 SAM DDR4-2400 Registered DIMM. – standard height. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V power consumption. Low-power auto self- refresh (LPASR). Provides better reliability, availability and serviceability (RAS) and improves data integrity.

8G R-DDR3-1600 1.35V&1.5V 512X8 SAM DDR3-1600 ECC Registered. 240-Pin. 512MX8. Samsung Chip.

8G DDR3-1600 512X8 1.35V HYX DDR3-1600. 240-Pin. 512MX8. Hynix Chip.

8GB ECC-DDR3-1600 1.35V&1.5V 512X8 SAM DDR3-1600 ECC. 240-Pin. 512MX8. Samsung Chip.

1GB I-GRADE SO-DDR1 400MHz 64Mx8 Micron DDR1-400 SO-DIMM. 200-Pin. 64MX8. Micron Chip.

1G SO-DDR1 400 64X8 PROMOS DDR1-400. 200-Pin. 64MBX8. Promos Chip.

4G DDR4 2400 512x8 REG VLP -40~85C SAM DDR4-2400 Registered DIMM. Very Low Profile. Wide temperature. 30μ" gold plating thickness. 1.2V Power Consumption. Provides better reliability, availability and serviceability (RAS) and improves data integrity.

Micron 16GB DDR4 UDIMM 3200Mhz 2Gbx8 1.2 DDR4 3200Mhz Unbuffered DIMM. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.

(DEL21)Micron 16G DDR4 2933 288PIN 2GbX4 DDR4 2933Mhz Registered DIMM. Supports ECC error detection and correction. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Provides better reliability, availability and serviceability (RAS) and improves data integrity.

(DEL21)Micron 32G DDR4 2933 288PIN 2GX4 DDR4 2933Mhz Registered DIMM. Supports ECC error detection and correction. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Provides better reliability, availability and serviceability (RAS) and improves data integrity.

16G ECC DDR4-2400 1GX8 1.2V HYX DDR4-2400 ECC DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance.

(DEL22)16G ECC DDR4-2400 1GX8 1.2V SAM DDR4 2400 ECC DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

16G ECC DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

16G ECC-DDR4-3200 1.2V 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. ECC.

16G DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.

16G DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered UDIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.

32G DDR4-2666 2GbX8 1.2V SAM Increased Bandwidth, up to 2600 Mbps. Industrial Stand 30u Gold Plating. Enhanced Power Efficiency. RoHS compliant & Complies with JEDEC standards. Up to 32GB .

32GB DDR4 DIMM-3200 2GbX8 SAM 32GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. Unbuffered.

16G ECC SO-DDR4-2400 1GX8 1.2V HYX DDR4 2400 ECC SO DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Hynix Original Chip.

(DEL22)16G ECC SO-DDR4-2400 1GX8 1.2V SA DDR4 2400 ECC SO-DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

16G ECC SO-DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

16G ECC-SODDR4-3200 1.2V 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. ECC.

16G SO-DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.

16G SO-DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.

32G SO-DDR4-2666 2GbX8 1.2V HYX Increased Bandwidth, up to 2600 Mbps. Industrial Stand 30u Gold Plating. Enhanced Power Efficiency. RoHS compliant & Complies with JEDEC standards. Up to 32GB .

32G SO-DDR4-2666 2GbX8 1.2V SAM Increased Bandwidth, up to 2600 Mbps. Industrial Stand 30u Gold Plating. Enhanced Power Efficiency. RoHS compliant & Complies with JEDEC standards. Up to 32GB .

32GB DDR4 SODIMM-3200 2GbX8 SAM 32GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. Unbuffered.

Micron 64G DDR4 3200 288PIN 4Gbx4 REG Micron DRAM Chip. DDR4 Spec . Registered DIMM. Gold edge contacts. 64GB.

DDR2 800 DIMM 2GB 128x8 Nanya Nanya DRAM Chip. DDR2. Long DIMM. Unbuffered. 2GB.

2G ECC DDR3-1600 256X8 1.35V SAM DDR3-1600 ECC. 240-Pin. 256MX8. Samsung Chip.

4GB ECC-DDR3-1600 1.35V&1.5V 512X8 SAM DDR3-1600 ECC. 240-Pin. 512MX8. Samsung Chip.

4G DDR3-1600 512X8 1.35V HYX DDR3-1600. 240-Pin. 512MX8. Hynix Chip.

Advantech 4G DDR3-1600 240Pin 256MX8 1.35V Unbuffered Samsung Chip DDR3-1600. 240-Pin. 256MX8. Samsung.

4G R-DDR3-1600 1.35V 512X8 SAM DDR3-1600 ECC Registered. 240-Pin. 512MX8. Samsung Chip.

(DEL21)Micron 8GB DDR4 UDIMM 3200Mhz 1Gb DDR4 3200Mhz Unbuffered DIMM. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.

16G DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.

(DEL22)4G ECC DDR4-2400 512X8 1.2V SAM DDR4 2400 ECC DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

4G ECC DDR4-2666 512X8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

4G DDR4-2400 512X16 1.2V HYX DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.

(DEL22)4G DDR4-2400 512X8 1.2V SAM DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.

4G DDR4-2400 512X16 1.2V SAM Samsung DRAM Chip. DDR4 Spec . Unbuffered DIMM. 30μ" gold plating thickness. 4GB.

8G ECC DDR4-2400 1GX8 1.2V HYX DDR4-2400 ECC DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance.

8G DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.

8G DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.

8G DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered UDIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.

512MB SO-DDR1 400 64X8 PROMOS DDR1-400 SO-DIMM. 200-Pin. 64MX8. Promos Chip.

DDR2 800 SODIMM 1GB 128x8 Nanya Nanya DRAM Chip. DDR3. So-DIMM. Unbuffered. 1GB.

1G SO-DDR3-1333 128X8 1.5V SAM(G) DDR3-1333 SO-DIMM. 204-Pin. 128MX8. Samsung Chip.

1G SO-DDR3-1600 128X16 1.35V SAM DDR3 1600Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.35V power consumption. Samsung original chip.

4G ECC SO-DDR3-1600 512X8 1.35V SAM DDR3-1600 ECC SO-DIMM. 204-Pin. 512MX8. Samsung Chip.

4G SO-DDR3-1600 512X8 1.35V HYX DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Hynix Chip.

(DEL21)4G SO-DDR3-1600 512X8 1.35V MIC DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Micron Chip.

Advantech 4G SO-DDR3-1600 204Pin 256X8 1.35V Unbuffered Samsung Chip DDR3-1600 SO-DIMM. 204-Pin. 256MX8. Samsung Chip.

Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip DDR3 1600Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.35V power consumption. Samsung original chip.