DRAM Memory Module

DRAM Memory Module

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Advantech AQD-SD4U16N24-SE

16G SO-DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.

Advantech AQD-SD4U16N24-HE

16G SO-DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.

Advantech AQD-SD4U16N26-SE

16G SO-DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.

Advantech 96D4-8G3200NN-MI

(DEL21)Micron 8GB DDR4 UDIMM 3200Mhz 1Gb DDR4 3200Mhz Unbuffered DIMM. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.

Advantech 96D4-16G2933ER-MI

(DEL21)Micron 16G DDR4 2933 288PIN 2GbX4 DDR4 2933Mhz Registered DIMM. Supports ECC error detection and correction. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Provides better reliability, availability and serviceability (RAS) and improves data integrity.

  • Out-of-Stock
Advantech 96D4-32G2933ER-MI

(DEL21)Micron 32G DDR4 2933 288PIN 2GX4 DDR4 2933Mhz Registered DIMM. Supports ECC error detection and correction. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Provides better reliability, availability and serviceability (RAS) and improves data integrity.

  • Out-of-Stock
Advantech AQD-D4U16E24-HE

16G ECC DDR4-2400 1GX8 1.2V HYX DDR4-2400 ECC DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance.

  • Out-of-Stock
Advantech AQD-D4U16E24-SE

(DEL22)16G ECC DDR4-2400 1GX8 1.2V SAM DDR4 2400 ECC DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

  • Out-of-Stock
Advantech AQD-D4U16E26-SE

16G ECC DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

  • Out-of-Stock
Advantech AQD-D4U16GE32-SE

16G ECC-DDR4-3200 1.2V 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. ECC.

  • Out-of-Stock
Advantech AQD-D4U16GN32-SE

16GB DDR4 DIMM-3200 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. Unbuffered.

  • Out-of-Stock
Advantech AQD-D4U16N24-HE

16G DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.

  • Out-of-Stock
Advantech AQD-D4U16N26-SE

16G DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered UDIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.

  • Out-of-Stock
Advantech AQD-D4U32GN26-HB

32G DDR4-2666 2GbX8 1.2V HYX Increased Bandwidth, up to 2600 Mbps. Industrial Stand 30u Gold Plating. Enhanced Power Efficiency. RoHS compliant & Complies with JEDEC standards. Up to 32GB.

  • Out-of-Stock
Advantech AQD-D4U32GN26-SB

32G DDR4-2666 2GbX8 1.2V SAM Increased Bandwidth, up to 2600 Mbps. Industrial Stand 30u Gold Plating. Enhanced Power Efficiency. RoHS compliant & Complies with JEDEC standards. Up to 32GB .

  • Out-of-Stock
Advantech AQD-D4U32GN32-SB

32GB DDR4 DIMM-3200 2GbX8 SAM 32GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. Unbuffered.

  • Out-of-Stock
Advantech AQD-SD4U16E24-HE

16G ECC SO-DDR4-2400 1GX8 1.2V HYX DDR4 2400 ECC SO DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Hynix Original Chip.

  • Out-of-Stock
Advantech AQD-SD4U16E24-SE

(DEL22)16G ECC SO-DDR4-2400 1GX8 1.2V SA DDR4 2400 ECC SO-DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

  • Out-of-Stock
Advantech AQD-SD4U16E26-SE

16G ECC SO-DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

  • Out-of-Stock
Advantech AQD-SD4U16GE32-SE

16G ECC-SODDR4-3200 1.2V 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. ECC.

  • Out-of-Stock
Advantech AQD-SD4U16GN32-SE

16GB DDR4 SODIMM-3200 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. Unbuffered.

  • Out-of-Stock
Advantech AQD-SD4U32GN26-HB

32G SO-DDR4-2666 2GbX8 1.2V HYX Increased Bandwidth, up to 2600 Mbps. Industrial Stand 30u Gold Plating. Enhanced Power Efficiency. RoHS compliant & Complies with JEDEC standards. Up to 32GB .

  • Out-of-Stock
Advantech AQD-SD4U32GN26-SB

32G SO-DDR4-2666 2GbX8 1.2V SAM Increased Bandwidth, up to 2600 Mbps. Industrial Stand 30u Gold Plating. Enhanced Power Efficiency. RoHS compliant & Complies with JEDEC standards. Up to 32GB .

  • Out-of-Stock
Advantech AQD-SD4U32GN32-SB

32GB DDR4 SODIMM-3200 2GbX8 SAM 32GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. Unbuffered.

  • Out-of-Stock
Advantech 96D4-64G3200ER-MI

Micron 64G DDR4 3200 288PIN 4Gbx4 REG Micron DRAM Chip. DDR4 Spec . Registered DIMM. Gold edge contacts. 64GB.

  • Out-of-Stock
Advantech AQD-D3L2GN16-SQ1

2G DDR3-1600 256X8 1.35V&1.5V SAM DDR3 1600Mhz Unbuffered DIMM. 30μ" gold plating thickness . 1.35V power consumption. Samsung original chip.

  • Out-of-Stock
Advantech AQD-D3L4GN16-SG1

4G DDR3-1600 512X8 1.35V & 1.5V SAM DDR3 1600Mhz Unbuffered DIMM. 30μ" gold plating thickness. 1.35V power consumption. Samsung original chip.

  • Out-of-Stock
Advantech AQD-D3L8GN16-SG1

8G DDR3-1600 512X8 1.35V 1.5V SAM DDR3 1600Mhz Unbuffered DIMM. 30μ" gold plating thickness. 1.35V power consumption. Samsung original chip.

  • Out-of-Stock
Advantech 96D4-4G3200NN-MI

(DEL21)Micron 4GB DDR4 UDIMM 3200Mhz 512 DDR4 3200Mhz Unbuffered DIMM. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.

  • Out-of-Stock
Advantech AQD-D4U16N24-SE

16G DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.

  • Out-of-Stock
Advantech AQD-D4U4GE24-SG

(DEL22)4G ECC DDR4-2400 512X8 1.2V SAM DDR4 2400 ECC DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

  • Out-of-Stock
Advantech AQD-D4U4GE26-SG

4G ECC DDR4-2666 512X8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

  • Out-of-Stock
Advantech AQD-D4U4GN24-HP

4G DDR4-2400 512X16 1.2V HYX DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.

  • Out-of-Stock
Advantech AQD-D4U4GN24-SG

(DEL22)4G DDR4-2400 512X8 1.2V SAM DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.

  • Out-of-Stock
Advantech AQD-D4U4GN24-SP

4G DDR4-2400 512X16 1.2V SAM Samsung DRAM Chip. DDR4 Spec . Unbuffered DIMM. 30μ" gold plating thickness. 4GB.

  • Out-of-Stock
Advantech AQD-D4U4GN26-SG

4G DDR4-2666 512MbX8 1.2V SAM DDR4 2666Mhz Unbuffered UDIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.

  • Out-of-Stock
Advantech AQD-D4U8GE24-HE

8G ECC DDR4-2400 1GX8 1.2V HYX DDR4-2400 ECC DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance.

  • Out-of-Stock
Advantech AQD-D4U8GN24-HE

8G DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.

  • Out-of-Stock
Advantech AQD-D4U8GN24-SE

8G DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.

  • Out-of-Stock
Advantech AQD-D4U8GN26-SE

8G DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered UDIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.

  • Out-of-Stock
Advantech AQD-D4U8GN32-SE

8GB DDR4 DIMM-3200 1GbX8 SAM 8GB. DDR 4 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. Unbuffered.

  • Out-of-Stock