DRAM Memory Module

DRAM Memory Module

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Advantech AQD-SD3L4GN16-SG1

4G SO-DDR3-1600 512X8 1.35V 1.5V SAM DDR3 1600Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness . 1.35V power consumption. Samsung original chip.

Advantech AQD-SD4U8GN32-SE

8GB DDR4 SODIMM-3200 1GbX8 SAM DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. 100% tested for stability, compatibility and performance.

Advantech AQD-SD4U16GN32-SE

16GB DDR4 SODIMM-3200 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. Unbuffered.

Advantech AQD-D4U4GN24-SG

(DEL22)4G DDR4-2400 512X8 1.2V SAM DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.

Advantech 96D4-32G3200ER-MI

Micron 32G DDR4 3200 288PIN 2GX4 REG 1.2 DDR4-3200 Registered ECC DIMM. 1.2V power consumption. Supports ECC error detection and correction. Data bus inversion (DBI) for data bus. Low-power auto self refresh (LPASR).

Advantech AQD-D3L2GN16-SQ1

2G DDR3-1600 256X8 1.35V&1.5V SAM DDR3 1600Mhz Unbuffered DIMM. 30μ" gold plating thickness . 1.35V power consumption. Samsung original chip.

Advantech AQD-D4U16GN32-SE

16GB DDR4 DIMM-3200 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. Unbuffered.

Advantech AQD-SD4U8GN24-SE

8G SO-DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.

Advantech AQD-D3L8GN16-SG1

8G DDR3-1600 512X8 1.35V 1.5V SAM DDR3 1600Mhz Unbuffered DIMM. 30μ" gold plating thickness. 1.35V power consumption. Samsung original chip.

Advantech AQD-SD4U16N24-HE

16G SO-DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.

Advantech AQD-D4U4GN24-HP

4G DDR4-2400 512X16 1.2V HYX DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.

Advantech AQD-D4U4GN32-SP

4GB DDR4 3200 512MX16 SAM 4GB. DDR 4 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. Unbuffered.

Advantech AQD-D4U8GN24-SE

8G DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.

Advantech AQD-SD3L8GN16-SG1

8G SO-DDR3-1600 512X8 1.35V 1.5V SAM DDR3 1600Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness . 1.35V power consumption. Samsung original chip.

Advantech AQD-D4U16N24-SE

16G DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.

Advantech AQD-D4U8GN24-HE

8G DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.

Advantech AQD-SD4U8GN26-SE

8G SO-DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.

Advantech AQD-D4U16N26-SE

16G DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered UDIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.

Advantech AQD-D4U4GN26-SG

4G DDR4-2666 512MbX8 1.2V SAM DDR4 2666Mhz Unbuffered UDIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.

Advantech 96D4-8G3200ER-MI

Micron 8G DDR4 3200 288PIN 1GbX8 REG 1.2 DDR4-3200 Registered ECC DIMM. 1.2V power consumption. Supports ECC error detection and correction. Data bus inversion (DBI) for data bus. Low-power auto self refresh (LPASR).

Advantech AQD-SD4U4GN24-HP

4G SO-DDR4-2400 512X16 1.2V HYX DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.

Advantech 96D4-16G3200NN-M

Micron 16GB DDR4 UDIMM 3200Mhz 2Gbx8 1.2 DDR4 3200Mhz Unbuffered DIMM. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.

Advantech 96D4-16G3200ER-MI1

Micron 16G DDR4 3200 288PIN 2GbX8 REG 1. DDR4-3200 Registered ECC DIMM. 1.2V power consumption. Supports ECC error detection and correction. Data bus inversion (DBI) for data bus. Low-power auto self refresh (LPASR).

Advantech AQD-SD4U16N24-SE

16G SO-DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.

Advantech AQD-D5V16GN48-SB

16GB DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

Advantech 96D4-4G3200NN-MI

(DEL21)Micron 4GB DDR4 UDIMM 3200Mhz 512 DDR4 3200Mhz Unbuffered DIMM. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.

Advantech AQD-D4U8GN26-SE

8G DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered UDIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.

Advantech AQD-SD4U8GN24-HE

8G SO-DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.

8GB SO-DDR5-4800 1GX16 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

  • On enquiry
Advantech 96D4I-8G3200R-AT1

8G DDR4 3200 512x8 REG VLP -40~85℃ SAM DDR4-3200 Registered ECC DIMM. Very Low Profile. Wide temperature. 1.2V Power Consumption. Low-power auto self refresh (LPASR).

  • On enquiry
Advantech AQD-SD5V16GN48-SB

16GB SO-DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

  • On enquiry
Advantech AQD-SD5V32GE48-SB

32GB ECC SO-DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

  • On enquiry
Advantech AQD-SD5V16GE48-SB

16GB ECC SO-DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

  • On enquiry
Advantech AQD-D5V32GR48-SB

32GB R-DDR5 4800 R-Dimm 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

  • On enquiry
Advantech AQD-D5V32GE48-SB

32GB ECC DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

  • On enquiry
Advantech AQD-D5V16GE48-SB

16GB ECC DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

  • On enquiry
Advantech AQD-SD4U4GN32-SP

4GB DDR4 SODIMM-3200 512Mbx16 SAM DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. 100% tested for stability, compatibility and performance.

  • On enquiry
Advantech AQD-D5V8GN48-SC

8GB DDR5-4800 1GX16 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.

  • On enquiry
Advantech 96D4-64G3200ER-M2

Micron 64G DDR4 3200 288PIN 16Gbx4 REG Micron DRAM Chip. DDR4. Registered DIMM. Gold edge contacts. 64GB.

  • On enquiry
Advantech 96D4-8G3200NN-M

Micron 8GB DDR4 UDIMM 3200Mhz 1Gbx8 1.2V DDR4 3200Mhz Unbuffered DIMM. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.

  • On enquiry
Advantech AQD-SD4U8GE26-SE

8G ECC SO-DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.

  • On enquiry
Advantech AQD-SD3L8GN16-SGW

8G SO-DDR3-1600 512X8 1.35V SAM -40~85℃ 30u" Gold Plating Thickness. Anti-sulfurization resistance. Samsung original chip. Wide Temp. -40C to +85C. 100% tested for stability, compatibility and performance.

  • On enquiry