4G SO-DDR3-1600 512X8 1.35V 1.5V SAM DDR3 1600Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness . 1.35V power consumption. Samsung original chip.
-
-
-
-
Advantech
-
-
-
-
Connections
-
Cellular Routers and Gateways
- Accessories
- Antennas
- Dual Module 4G Routers
- EN 50155 Railway 4G Routers
- Entry Level 4G Routers
- Entry Level 4G Routers & IoT Gateways
- Flexible 4G Routers & IoT Gateways
- High Speed 4G/5G Routers & Edge Computing Gateways
- Modular 3G Routers
- Modular 4G Routers
- Power supplies
- Robust 4G Routers & IoT Gateways
- Software
- Wired LAN Routers
- Ethernet / Serial Device Servers
- Fiber & PoE Converters, Injectors, Extenders
- Industrial Ethernet Switches
- Industrial Protocol Gateways
- Industrial Wireless and Gateways
-
Serial Communication
- Serial Communication Cards
-
Serial Converters/Isolators/Repeaters - ULI-200
- Data Tap/Splitter/Port Combiner - ULI-250/260
- RS-232 Isolated Repeater/Isolator - ULI-232 Series
- RS-232 to RS-422 Converters - ULI-223 Series
- RS-232 to RS-422/485 Converters - ULI-224 Series
- RS-232 to RS-485 Converters - ULI-226 Series
- RS-232/422 to TTL/Current Loop Converter - ULI-227
- RS-422/485 Isolated Repeaters - ULI-234 Series
- Serial Surge Suppressors - ULI-240 Series
- Serial to Fiber Converters - ULI-210 Series
- USB Converters/Isolators/Hubs - ULI-300/400
- Telematics Converters and Gateways
-
Cellular Routers and Gateways
-
-
Industrial automation
-
Industrial Automation
- Automation Controllers & I/O
- Certified Solutions
- Class I, Division 2 Solution
-
Data Acquisition (DAQ)
- 3U Communication Boards (MIC-3600 Series)
- 3U Data Acquisition and Control Boards (MIC-3700 Series)
- DAQ Cards
- DAQ-embedded Computer/Module
- DAQNavi
- GPIB
- iDoor Module(Mini PCIe)
- ISA DAQ Cards
- Modular DAQ System
- PC-104/PCI-104 DAQ & Communication Cards
- Signal Conditioning Modules and Terminal Boards
- USB Modules
-
Embedded Automation Computers
- Advantech iDoor Module
- Compact Embedded Box IPC
- Compact Embedded Box PC
- Din-Rail Automation Computer, UNO-1 Series
- Din-Rail Control IPC
- Expandable Automation Computer
- Expandable Automation Computer, UNO-3 Series
- Explosion-Proof Computer
- Industrial IoT Edge Gateway
- Rackmountable Automation Computers for Power Substations
- Standmount Embedded Box PC, UNO-2 Series
- UNO Accessories
- Gateways & Remote Terminal Units (RTUs)
- Human Machine Interfaces
- Machine Automation
- Panel PC
- Power & Energy
- Remote I/O
- SoftLogic Software
- Software Development Kits
- WebAccess Software & Edge SRP
- Wireless I/O & Sensors
-
Industrial Automation
-
Embedded computing
-
Embedded Computing
- AIoT Software, Distribution & Services
- Arm-Based Computing Platforms
- Cable Accessories
- Computer On Modules
- Digital Signage Players
- Edge AI & Intelligence Solutions
- Embedded PCs
- Embedded Single Board Computers
- Embedded Software
-
Fanless Embedded Computers
- ARK Ultra Rugged Series
- ARK-1000 Series: Ultra Slim Fanless Embedded Computers
- ARK-2000 series : Easy I/O Flexibility Fanless Embedded Computers
- ARK-3000 Series: High Performance Fanless Embedded Computers
- ARK-6300 Series: Mini-ITX Series Fanless Embedded Computers
- ARK-7000 Series: Extreme Performance Edge Servers
- iDoor Module Mini PCIe Expansion Kit
- Storage Modules
- Gaming Platform Solutions
- Industrial Display Systems
- Industrial Flash & Memory Solutions
- Industrial Motherboards
- Industrial Wireless Solutions
- Wireless ePaper Display Solutions
-
Embedded Computing
-
-
-
-
Westermo
-
-
-
-
Ethernet Extenders
-
Industrial routers
-
-
-
Wireless & Cellular
-
Modems
-
Accessories
-
-
-
-
-
Korenix
-
-
-
Ethernet switches
-
-
-
Media convertors
-
Industrial connectivity
-
-
-
Wireless data transfer
-
-
-
-
-
Elproma
-
-
-
Elproma
-
-
-
DRAM Memory Module
Subcategories
4G SO-DDR3-1600 512X8 1.35V 1.5V SAM(G) DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Samsung Chip.
8GB DDR4 SODIMM-3200 1GbX8 SAM DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. 100% tested for stability, compatibility and performance.
16GB DDR4 SODIMM-3200 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. Unbuffered.
(DEL22)4G DDR4-2400 512X8 1.2V SAM DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.
8G SO-DDR3-1600 512X8 1.35V 1.5V SAM(G) DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Samsung Chip.
Micron 32G DDR4 3200 288PIN 2GX4 REG 1.2 DDR4-3200 Registered ECC DIMM. 1.2V power consumption. Supports ECC error detection and correction. Data bus inversion (DBI) for data bus. Low-power auto self refresh (LPASR).
2G DDR3-1600 256X8 1.35V&1.5V SAM DDR3 1600Mhz Unbuffered DIMM. 30μ" gold plating thickness . 1.35V power consumption. Samsung original chip.
16GB DDR4 DIMM-3200 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. Unbuffered.
8G SO-DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.
2G SO-DDR3-1600 256X8 1.35V SAM(G) DDR3-1600 SO-DIMM. 204-Pin. 256MX8. Samsung Chip.
8G DDR3-1600 512X8 1.35V 1.5V SAM DDR3 1600Mhz Unbuffered DIMM. 30μ" gold plating thickness. 1.35V power consumption. Samsung original chip.
16G SO-DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.
4G DDR4-2400 512X16 1.2V HYX DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.
4GB DDR4 3200 512MX16 SAM 4GB. DDR 4 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. Unbuffered.
8G DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.
8G SO-DDR3-1600 512X8 1.35V 1.5V SAM DDR3 1600Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness . 1.35V power consumption. Samsung original chip.
16G DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.
8G DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.
8G SO-DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.
8G ECC SO-DDR3-1600 512X8 1.35V&1.5V SAM DDR3-1600 ECC SO-DIMM. 204-Pin. 512MX8. Samsung Chip.
8G DDR3-1600 512X8 1.35V&1.5V SAM(G) DDR3-1600. 240-Pin. 512MX8. Samsung Chip.
8GB ECC-DDR3-1600 1.35V&1.5V 512X8 SAM DDR3-1600 ECC. 240-Pin. 512MX8. Samsung Chip.
16G DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered UDIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.
4G DDR4-2666 512MbX8 1.2V SAM DDR4 2666Mhz Unbuffered UDIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.
Micron 8G DDR4 3200 288PIN 1GbX8 REG 1.2 DDR4-3200 Registered ECC DIMM. 1.2V power consumption. Supports ECC error detection and correction. Data bus inversion (DBI) for data bus. Low-power auto self refresh (LPASR).
4G SO-DDR4-2400 512X16 1.2V HYX DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.
Micron 16GB DDR4 UDIMM 3200Mhz 2Gbx8 1.2 DDR4 3200Mhz Unbuffered DIMM. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
Micron 16G DDR4 3200 288PIN 2GbX8 REG 1. DDR4-3200 Registered ECC DIMM. 1.2V power consumption. Supports ECC error detection and correction. Data bus inversion (DBI) for data bus. Low-power auto self refresh (LPASR).
16G SO-DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.
16GB DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
8G R-DDR3-1600 1.35V&1.5V 512X8 SAM DDR3-1600 ECC Registered. 240-Pin. 512MX8. Samsung Chip.
(DEL21)4G DDR3-1600 512X8 1.35V MIC DDR3-1600. 240-Pin. 512MX8. Micron Chip.
(DEL21)Micron 4GB DDR4 UDIMM 3200Mhz 512 DDR4 3200Mhz Unbuffered DIMM. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
8G DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered UDIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.
8G SO-DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered SO-DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.
8GB SO-DDR5-4800 1GX16 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
- On enquiry
8G DDR4 3200 512x8 REG VLP -40~85℃ SAM DDR4-3200 Registered ECC DIMM. Very Low Profile. Wide temperature. 1.2V Power Consumption. Low-power auto self refresh (LPASR).
- On enquiry
16GB SO-DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
- On enquiry
32GB ECC SO-DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
- On enquiry
16GB ECC SO-DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
- On enquiry
32GB R-DDR5 4800 R-Dimm 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
- On enquiry
32GB ECC DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
- On enquiry
16GB ECC DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
- On enquiry
4GB DDR4 SODIMM-3200 512Mbx16 SAM DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. 100% tested for stability, compatibility and performance.
- On enquiry
8GB DDR5-4800 1GX16 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
- On enquiry
Micron 64G DDR4 3200 288PIN 16Gbx4 REG Micron DRAM Chip. DDR4. Registered DIMM. Gold edge contacts. 64GB.
- On enquiry
Micron 8GB DDR4 UDIMM 3200Mhz 1Gbx8 1.2V DDR4 3200Mhz Unbuffered DIMM. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
- On enquiry
8G ECC SO-DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
- On enquiry
8G SO-DDR3-1600 512X8 1.35V SAM -40~85℃ 30u" Gold Plating Thickness. Anti-sulfurization resistance. Samsung original chip. Wide Temp. -40C to +85C. 100% tested for stability, compatibility and performance.
- On enquiry