16GB DDR4 DIMM-3200 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. Unbuffered.
32G DDR4-3200 2GX8 1.2V SAM-20~85℃ SAM Original Chip. Industrial Design for Improved Reliability. PCB: 30μ gold finger. Anti-sulfuration. SEMI Wide-temp Support -20~85℃.
32GB DDR4 DIMM-3200 2GbX8 SAM 32GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. Unbuffered.
4G R-DDR4-2400 1.2V 512X8 SAM DDR4-2400 Registered DIMM. – standard height. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V power consumption. Low-power auto self- refresh (LPASR). Provides better reliability, availability and serviceability (RAS) and improves data integrity.
4G DDR4-2666 512MbX8 1.2V SAM DDR4 2666Mhz Unbuffered UDIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.
8G DDR4-3200 1GX8 1.2V SAM -20~85℃ SAM Original Chip. Industrial Design for Improved Reliability. PCB: 30μ gold finger. Anti-sulfuration. SEMI Wide-temp Support -20~85℃.
16G DDR4-3200 1GX8 1.2V SAM -20~85℃ SAM Original Chip. Industrial Design for Improved Reliability. PCB: 30μ gold finger. Anti-sulfuration. SEMI Wide-temp Support -20~85℃.
32G R-DDR4-3200 2GX8 1.2V SAM -40~85C Registered DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. wide temperatures from -40° to 85°C.
16G R-DDR4-3200 1GX8 1.2V SAM -40~85C Registered DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. wide temperatures from -40° to 85°C.
8G DDR4 3200 512x8 REG VLP -40~85℃ SAM DDR4-3200 Registered ECC DIMM. Very Low Profile. Wide temperature. 1.2V Power Consumption. Low-power auto self refresh (LPASR).
Micron 8G DDR4 3200 288PIN 1GbX8 REG 1.2V DDR4-3200 Registered ECC DIMM. 1.2V power consumption. Supports ECC error detection and correction. Data bus inversion (DBI) for data bus. Low-power auto self refresh (LPASR).
Micron 64G DDR4 3200 288PIN 16Gbx4 REG Micron DRAM Chip. DDR4. Registered DIMM. Gold edge contacts. 64GB.
Micron 32G DDR4 3200 288PIN 2GX4 REG 1.2V DDR4-3200 Registered ECC DIMM. 1.2V power consumption. Supports ECC error detection and correction. Data bus inversion (DBI) for data bus. Low-power auto self refresh (LPASR).
Micron 16G DDR4 3200 288PIN 2GbX8 REG 1.2V DDR4-3200 Registered ECC DIMM. 1.2V power consumption. Supports ECC error detection and correction. Data bus inversion (DBI) for data bus. Low-power auto self refresh (LPASR).
Micron 8GB DDR4 UDIMM 3200Mhz 1Gbx8 1.2V DDR4 3200Mhz Unbuffered DIMM. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
8G ECC-DDR4-3200 1.2V 1GX8 SAM 8GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. ECC.
8G ECC DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
4G DDR4 2400 512x8 REG VLP -40~85C SAM DDR4-2400 Registered DIMM. Very Low Profile. Wide temperature. 30μ" gold plating thickness. 1.2V Power Consumption. Provides better reliability, availability and serviceability (RAS) and improves data integrity.
Micron 16GB DDR4 UDIMM 3200Mhz 2Gbx8 1.2 DDR4 3200Mhz Unbuffered DIMM. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
(DEL21)Micron 16G DDR4 2933 288PIN 2GbX4 DDR4 2933Mhz Registered DIMM. Supports ECC error detection and correction. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Provides better reliability, availability and serviceability (RAS) and improves data integrity.
(DEL21)Micron 32G DDR4 2933 288PIN 2GX4 DDR4 2933Mhz Registered DIMM. Supports ECC error detection and correction. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Provides better reliability, availability and serviceability (RAS) and improves data integrity.
16G ECC DDR4-2400 1GX8 1.2V HYX DDR4-2400 ECC DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance.
(DEL22)16G ECC DDR4-2400 1GX8 1.2V SAM DDR4 2400 ECC DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
16G ECC DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
16G ECC-DDR4-3200 1.2V 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. ECC.
16G DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.
16G DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered UDIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.
32G DDR4-2666 2GbX8 1.2V HYX Increased Bandwidth, up to 2600 Mbps. Industrial Stand 30u Gold Plating. Enhanced Power Efficiency. RoHS compliant & Complies with JEDEC standards. Up to 32GB.
32G DDR4-2666 2GbX8 1.2V SAM Increased Bandwidth, up to 2600 Mbps. Industrial Stand 30u Gold Plating. Enhanced Power Efficiency. RoHS compliant & Complies with JEDEC standards. Up to 32GB .
(DEL21)Micron 4GB DDR4 UDIMM 3200Mhz 512 DDR4 3200Mhz Unbuffered DIMM. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
(DEL21)Micron 8GB DDR4 UDIMM 3200Mhz 1Gb DDR4 3200Mhz Unbuffered DIMM. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
16G DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.
(DEL22)4G ECC DDR4-2400 512X8 1.2V SAM DDR4 2400 ECC DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
4G ECC DDR4-2666 512X8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
4G DDR4-2400 512X16 1.2V HYX DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.
(DEL22)4G DDR4-2400 512X8 1.2V SAM DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.
4G DDR4-2400 512X16 1.2V SAM Samsung DRAM Chip. DDR4 Spec . Unbuffered DIMM. 30μ" gold plating thickness. 4GB.
8G ECC DDR4-2400 1GX8 1.2V HYX DDR4-2400 ECC DIMM. 30μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance.
8G DDR4-2400 1GX8 1.2V HYX DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.
8G DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.
8G DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered UDIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.