SODIMM DDR3L 1600 8GB I-Grade (-40-85) 30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
SODIMM DDR3L 1600 8GB 512x8(0-85°C) Original Samsung/Micron IC chips adapted. Data transfer rate: 1600MHz. Operating Temperature: 0 °C ~ 85 °C. 30u” golden finger and Fixed BOM. Free Intelligent software monitor DRAM real time information.
SODIMM DDR4 2666 8GB 1Gbx8 (0-85C) Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
SODIMM DDR5 4800 16GB 2Gx8 (0-95) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR4 2666 16GB 1Gbx8 (0-85C) Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
UDIMM DDR4 2666 8GB 1Gx8 (0-85) SAM 288-pin Dual In-Line Memory Module. Data Transfer Rate: 2666/3200 MT/s. Capacity: 2GB/4GB/8GB/16GB. Operating Temperature: 0°C ~ 85°C. Fixed BOM / Lifetime warranty.
RDIMM D4 3200 16GB (0-85) SAM-C 1Gbx8 100% Screening Test. Compatible with server platform. Original IC chip adopted. 30u” golden finger.
UDIMM DDR4 2666 16GB 1024x8 (0-85) SAM-C 288-pin Dual In-Line Memory Module. Data Transfer Rate: 2666/3200 MT/s. Capacity: 2GB/4GB/8GB/16GB. Operating Temperature: 0°C ~ 85°C. Fixed BOM / Lifetime warranty.
SODIMM DDR4 3200 8GB 1Gbx8 (0-85C) Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
UDIMM DDR4 3200 8GB 1Gx8 (0-85) SAM 288-pin Dual In-Line Memory Module. Data Transfer Rate: 2666/3200 MT/s. Capacity: 2GB/4GB/8GB/16GB. Operating Temperature: 0°C ~ 85°C. Fixed BOM / Lifetime warranty.
SODIMM DDR5 4800 32GB 2Gx8 (0-85) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 5600 16GB 2Gx8 Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
UDIMM DDR4 2666 8GB 512x8 (0-85) SAM_F 288-pin Dual In-Line Memory Module. Data Transfer Rate: 2666/3200 MT/s. Capacity: 2GB/4GB/8GB/16GB. Operating Temperature: 0°C ~ 85°C. Fixed BOM / Lifetime warranty.
SODIMM DDR5 4800 16GB 2Gx8 (0-95) Hynix Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 5600 8GB 1Gx16 Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 4800 8GB 1Gx16 (0-85) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 4800 16GB 2Gx8 (-40-85) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8GB/16GB/32GB. Original Samsung IC adopted. Independent Power Management IC build-in. Operating Temperature: -40°C ~ 95°C.
RDIMM D4 3200 32GB (0-85) SAM 2Gbx4 100% Screening Test. Compatible with server platform. Original IC chip adopted. 30u” golden finger.
SODIMM DDR4 3200 8GB 1Gx8 (-40-85) SAM 30u” Golden Finger. Wide Temp range: -40oC~85oC. Tier one original chip adopt. Fixed BOM & lifetime warranty. DRAM Software Monitoring.
SODIMM DDR4 3200 Semi 16GB 1Gx8 (0-85) SAM Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
RDIMM D4 3200 32GB (0-85) SAM 2Gbx4 100% Screening Test. Compatible with server platform. Original IC chip adopted. 30u” golden finger.
ECC UDIMM DDR4 3200 16GB (0-85) SAM-G Fixed BOM/ Fixed die. 30u” golden finger. Tier one original chip adopted. EEPROM with Thermal sensor. 100% Screen Test. Burn-In Test.
SODIMM ECC DDR4 3200 32GB 2Gx8 (-40-85) SAM 260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
RDIMM D4 2666 8GB (0-85) SAM-C 1Gbx8 100% Screening Test. Compatible with server platform. Original IC chip adopted. 30u” golden finger.
SODIMM DDR4 2666 8GB 1Gbx8 (-40-85C) 30u” Golden Finger. Wide Temp range: -40oC~85oC. Tier one original chip adopt. Fixed BOM & lifetime warranty. DRAM Software Monitoring.
ECC UDIMM DDR4 3200 32GB (0-85) SAM-C Fixed BOM/ Fixed die. 30u” golden finger. Tier one original chip adopted. EEPROM with Thermal sensor. 100% Screen Test. Burn-In Test.
SODIMM ECC DDR4 3200 32GB 2Gx8 (0-85) SAM 260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
SODIMM ECC DDR4 3200 8GB 1Gx8 (-40-85) SAM 260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
204pin SODIMM DDR3L 1600 8GB 512x8(-40-85) Micro 30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
SQRAM 8G SO-DDR3-1600 LOW VOLTAGE I-GRD 30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
SODIMM DDR5 4800 8GB 1Gx16 (-40-85) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8GB/16GB/32GB. Original Samsung IC adopted. Independent Power Management IC build-in. Operating Temperature: -40°C ~ 95°C.
ECC UDIMM DDR4 3200 8GB (0-85) SAM-G Fixed BOM/ Fixed die. 30u” golden finger. Tier one original chip adopted. EEPROM with Thermal sensor. 100% Screen Test. Burn-In Test.
SODIMM DDR5 4800 32GB 2Gx8 (-40-85) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8GB/16GB/32GB. Original Samsung IC adopted. Independent Power Management IC build-in. Operating Temperature: -40°C ~ 95°C.
SODIMM DDR4 2666 32G SAM 2Gbx8 (-40-85C) 30u” Golden Finger. Wide Temp range: -40oC~85oC. Tier one original chip adopt. Fixed BOM & lifetime warranty. DRAM Software Monitoring.
SODIMM DDR3L 1600 4GB 256X16, ISSI-C(-40 30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
RDIMM D4 3200 32GB (0-85) Hynix 2Gbx8 100% Screening Test. Compatible with server platform. Original IC chip adopted. 30u” golden finger.
RDIMM D4 3200 16GB (0-85) Hynix 1Gbx8 100% Screening Test. Compatible with server platform. Original IC chip adopted. 30u” golden finger.
ECC UDIMM DDR5 4800 32GB 2Gx8 (0-85) Samsung Data Transfer Rate: 4800 MT/s. Capacity :16GB/32GB. Original Samsung IC adopted. ECC function support. Independent Power Management IC build-in. Operation Temperature: 0°C ~ 85°C.
UDIMM DDR5 4800 32GB 2Gx8 (0-85) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM ECC DDR4 3200 16GB 1Gx8 (-40-85) SAM 260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
SODIMM DDR4 3200 8GB 1024x8 (-20-85) SAM-C Original IC chip adopted. 30u” Golden Finger. Extended Temperature: -20C~85C. Monitor DRAM software tool support. Lifetime Warranty.
260pin SODIMM-D4-2666 8G 1Gbx8 HYNX 0-85 Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
SODIMM DDR3L 1600 8GB 512x8(0-85°C) Original Samsung/Micron IC chips adapted. Data transfer rate: 1600MHz. Operating Temperature: 0 °C ~ 85 °C. 30u” golden finger and Fixed BOM. Free Intelligent software monitor DRAM real time information.
RDIMM D4 3200 8GB (0-85) SAM-C 1Gbx8 100% Screening Test. Compatible with server platform. Original IC chip adopted. 30u” golden finger.
RDIMM D4 3200 64GB (0-85) SAM 4Gx4 100% Screening Test. Compatible with server platform. Original IC chip adopted. 30u” golden finger.
RDIMM D4 3200 16GB (0-85) SAM-G 1Gbx8 100% Screening Test. Compatible with server platform. Original IC chip adopted. 30u” golden finger.
SODIMM DDR5 5600 8GB 1Gx16 (0-95) Hynix Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 5600 16GB 2Gx8 (0-95) Hynix Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
RDIMM DDR5 4800 32GB 2Gx8 (0-85) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 16/32/64/128GB. 100% Screening Test. Compatible with server platform. Original IC chip adopted. 30u” golden finger. Operating Temperature: 0°C ~ 95°C.
260pin SODIMM-D4-2666 16G 1Gbx8 HYNX 0-85 Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
SODIMM DDR3L 1600 8GB Mi-Grade (-20-85) Tier one original Samsung chip adopted. Data transfer rate: 1600MT/s. 3yrs longevity & lifetime warranty. Operating Temperature: -20 °C ~ 85 °C. Free Intelligent software monitor DRAM real time information.
SODIMM DDR5 5600 16GB 2Gx8 Samsung(-40~95) Data Transfer Rate: 4800/5600 MT/s. Capacity : 8GB/16GB/32GB. Original Samsung IC adopted. Independent Power Management IC build-in. Operating Temperature: -40°C ~ 95°C.
SODIMM DDR5 4800 8GB 1Gx16 (0-95) Hynix Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 5600 48GB 3Gx8 Micron Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR5 5600 32GB 2Gx8 (0-95) Hynix Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
RDIMM DDR5 5600 64GB 4Gx4 Hynix Data Transfer Rate: 4800/5600 MT/s. Capacity : 16/32/64/128GB. 100% Screening Test. Compatible with server platform. Original IC chip adopted. 30u” golden finger. Operating Temperature: 0°C ~ 95°C.
ECC SODIMM DDR5 4800 16GB 2Gx8 (0-85) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity :16GB/32GB. Original Samsung/Micron IC adopted. ECC function support. Independent Power Management IC build-in. Operation Temperature: 0°C ~ 95°C.
RDIMM DDR5 4800 16GB 2Gx8 (0-85) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 16/32/64/128GB. 100% Screening Test. Compatible with server platform. Original IC chip adopted. 30u” golden finger. Operating Temperature: 0°C ~ 95°C.
RDIMM DDR5 4800 16GB 2Gx8 (0-85) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 16/32/64/128GB. 100% Screening Test. Compatible with server platform. Original IC chip adopted. 30u” golden finger. Operating Temperature: 0°C ~ 95°C.
SODIMM ECC DDR4 3200 8GB 1Gx8 (0-85) SAM 260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
SODIMM DDR4 3200 4GB 512x16 (-40-85) SAM 30u” Golden Finger. Wide Temp range: -40oC~85oC. Tier one original chip adopt. Fixed BOM & lifetime warranty. DRAM Software Monitoring.
SODIMM ECC DDR4 3200 16GB 1Gx8 (0-85) SAM 260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
SODIMM DDR4 3200 32GB 2Gx8 (-40-85) SAM 30u” Golden Finger. Wide Temp range: -40oC~85oC. Tier one original chip adopt. Fixed BOM & lifetime warranty. DRAM Software Monitoring.
SODIMM DDR4 3200 16GB 1Gx8 (-40-85) SAM 30u” Golden Finger. Wide Temp range: -40oC~85oC. Tier one original chip adopt. Fixed BOM & lifetime warranty. DRAM Software Monitoring.
RDIMM D4 3200 8GB (0-85) SAM-G 1Gbx8 100% Screening Test. Compatible with server platform. Original IC chip adopted. 30u” golden finger.
SODIMM DDR4 3200 8GB (0-85) SAM-G Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
SODIMM DDR4 3200 16GB (0-85) SAM-G Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
RDIMM D4 3200 128GB (0-85) SAM 8Gx4 100% Screening Test. Compatible with server platform. Original IC chip adopted. 30u” golden finger.
ECC UDIMM DDR4 2666 4GB 512x8 (0-85) Fixed BOM/ Fixed die. 30u” golden finger. Tier one original chip adopted. EEPROM with Thermal sensor. 100% Screen Test. Burn-In Test.
SODIMM DDR3L 1600 2GB 256X16, ISSI-C(-40-95) 30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
UDIMM DDR3L 1600 8GB Micron 512X8 (0-85) Samsung Original memory IC. FIXED BOM. 3yrs longevity & lifetime warranty. Undergo strict test program. Support Smart Monitoring (SQR Manager).
UDIMM DDR5 4800 8GB 1Gx16 (0-85) Micron Data Transfer Rate: 4800 MT/s. Capacity : 16GB/32GB. Original Micron/Samsung IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 85°C.
SODIMM DDR5 4800 8GB 1Gx16 (0-95) Micron Data Transfer Rate: 4800 MT/s. Capacity : 8GB/16GB/32GB. Original Micron/Samsung IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
SODIMM DDR4 2666 16GB 1Gbx8 (-40-85C) 30u” Golden Finger. Wide Temp range: -40oC~85oC. Tier one original chip adopt. Fixed BOM & lifetime warranty. DRAM Software Monitoring.
UDIMM DDR5 4800 32GB 2Gx8 (0-85) Micron Data Transfer Rate: 4800 MT/s. Capacity : 16GB/32GB. Original Micron/Samsung IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 85°C.
UDIMM DDR5 4800 16GB 2Gx8 (0-85) Samsung Data Transfer Rate: 4800/5600 MT/s. Capacity : 8/16/24/32/48GB. Original Samsung/Micron IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
UDIMM DDR5 4800 16GB 2Gx8 (0-85) Micron Data Transfer Rate: 4800 MT/s. Capacity : 16GB/32GB. Original Micron/Samsung IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 85°C.
SODIMM DDR5 4800 32GB 2Gx8 (0-85) Micron Data Transfer Rate: 4800 MT/s. Capacity : 16GB/32GB. Original Micron/Samsung IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 85°C.
SODIMM DDR5 4800 16GB 2Gx8 (0-85) Micron Data Transfer Rate: 4800 MT/s. Capacity : 16GB/32GB. Original Micron/Samsung IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 85°C.
(DEL12)SQRAM 4G 240P DDR3-1333 I-GRD SAM-C Operating Temperature: -40° C to +85° C. Gold plating on PCB gold finger is 30u". JEDEC standard 1.5 V ± 0.075 V power supply. Max clock Freq: 667 MHz; 1333 Mb/s/Pin. Serial presence detected with 2048-bit EEPROM.
(DEL12)SQRAM 2G 240P DDR3-1333 I-GRD SAM-C Operating Temperature: -40° C to +85° C. Gold plating on PCB gold finger is 30u". JEDEC standard 1.5 V ± 0.075 V power supply. Max clock Freq: 667 MHz; 1333 Mb/s/Pin. Serial presence detected with 2048-bit EEPROM.
SQRAM 1G SO-DDR3-1333 I-GRD SAM-G 30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
SQRAM 2G SO-DDR2-667 128x8 I-GRD SAM-F Operating Temperature: -40° C to +85° C. Gold plating on PCB gold finger is 30 u". JEDEC standard 1.8 V ± 0.1 V Power supply. Max clock Freq: 333 MHZ; 667 Mb/s/Pin. Serial presence detected with 2048-bit EEPROM.
SQRAM 1G SO-DDR2-667 128x8 I-GRD SAM-F Operating Temperature: -40° C to +85° C. Gold plating on PCB gold finger is 30 u". JEDEC standard 1.8 V ± 0.1 V Power supply. Max clock Freq: 333 MHZ; 667 Mb/s/Pin. Serial presence detected with 2048-bit EEPROM.
260pin ECC SODIMM-D4-2666 32G SAM 2Gbx8, 0-85 260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
Rugged ECC-D4 2666 32GB SAM 2Gx8 , -40-85 Robust PCB designed with Mounting Hole with Military MIL-810G verified. Extreme Data Transfer rate up to 3200 MT/s. Capacity: up to 32GB. Wide Temperature supported: -40°C ~ 85 °C. Original IC chip (Samsung/Hynix).
SODIMM DDR4 3200 8GB 1Gx8 (0-85) Micron Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666/2400 MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
SODIMM DDR4 3200 4GB 512x16 (0-85) Micro Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666/2400 MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
SODIMM DDR4 3200 32GB 2Gx8 (0-85) Micron Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666/2400 MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
SODIMM DDR4 3200 16GB 2Gx8 (0-85) Micron Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666/2400 MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
MEMORY MODULE, 240pin UDIMM ECC D3 1600 8G 512x8 SAM E DIE Original memory chips (Samsun/Hynix). ECC function support. Fixed BOM. Wide Temperature support (-40~85oc).
SODIMM DDR4 3200 8GB 1Gx16 (0-85) Micron Original Samsung/Micron IC chips adapted. Data transfer rate: 3200/2666/2400 MT/s. Capacity: 2/4/8/16/32GB. Operating temperature: 0 °C ~ 85 °C. 3years longevity, Fixed BOM, Lifetime warranty.
ECC SODIMM DDR4 2666 8GB 1GX8 (0-85) 260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
ECC SODIMM DDR4 2666 8GB 1Gx8 (-40-85) SAM 260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
ECC SODIMM DDR4 2666 16GB 1Gx8 (-40-85) SAM 260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
SQRAM 4G SO-DDR3-1600 (-20~85) LOW VOL Tier one original Samsung chip adopted. Data transfer rate: 1600MT/s. 3yrs longevity & lifetime warranty. Operating Temperature: -20 °C ~ 85 °C. Free Intelligent software monitor DRAM real time information. .
SODIMM DDR3L 1866 4GB (-40-85) Tier one original Samsung chip adopted. Data transfer rate: 1600MT/s. 3yrs longevity & lifetime warranty. Operating Temperature: -20 °C ~ 85 °C. Free Intelligent software monitor DRAM real time information. .
SQRAM 4G SO-DDR3-1600 LOW VOLTAGE I-GRD 30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
SQRAM 4G SO-DDR3-1333 I-GRD SAM 30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
SQRAM 2G SO-DDR3-1600 LOW VOLTAGE I-GRD 30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
