Taiwan-based company, Advantech, is a leading global manufacturer and provider of intelligent systems and industrial automation technologies. With a history of over thirty years of development and innovation, Advantech has earned a reputation as a global leader in embedded and IoT solutions.
Advantech products are widely recognized for their durability, reliability, and performance in demanding industrial environments. It offers a wide array of products that include industrial and embedded computers, single board computers (SBC), server and storage solutions, IoT devices and gateways, networking products, and medical computing devices. These devices are designed for a range of industrial sectors, including transportation, healthcare, retail, communications, and industrial automation.
Advantech also excels in developing innovative technologies for the industrial sector. Its advanced solutions, such as the Advantech WISE-PaaS, provides a sophisticated platform for the rapid creation of IoT applications in the industry. With its products and solutions, Advantech significantly contributes to the digitalization and automation of the industry.
In all its products, Advantech places emphasis on reliability and safety. Each product undergoes strict quality and performance tests to ensure that it can withstand demanding industrial conditions while delivering optimum performance.
Advantech 16GB DDR5-5600 288Pin 2GX8 1.1V Unbuffered Hynix Chip Hynix Original Chip. Increased Banks and Burst Length. DDR5 5.6GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
8GB ECC-DDR3-1600 1.35V&1.5V 512X8 SAM DDR3-1600 ECC. 240-Pin. 512MX8. Samsung Chip.
8G R-DDR3-1600 1.35V&1.5V 512X8 SAM DDR3-1600 ECC Registered. 240-Pin. 512MX8. Samsung Chip.
Advantech 32GB SO-DIMM DDR5-5600 262Pin 2GX8 1.1V Unbuffered Hynix Chip Hynix Original Chip. Increased Banks and Burst Length. DDR5 5.6GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
Advantech 16GB SO-DIMM DDR5-5600 262Pin 2GX8 1.1V Unbuffered Hynix Chip Hynix Original Chip. Increased Banks and Burst Length. DDR5 5.6GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
32GB SO-DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
32G ECC-SODDR4 3200 1.2V 2GbX8 SAM 32GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. ECC.
16GB R-DDR5 4800 R-Dimm 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
8G ECC SO-DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
8G SO-DDR3-1600 512X8 1.35V HYX DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Hynix Chip.
8G ECC SO-DDR3-1600 512X8 1.35V&1.5V SAM DDR3-1600 ECC SO-DIMM. 204-Pin. 512MX8. Samsung Chip.
8G ECC DDR4-2666 1GX8 1.2V SAM DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip.
ATP 8G MICRO SD CARD I-GRD SLC(G) Supports SD mode, SPI mode. High reliability, operating at -40~ 85°C. SLC NAND flash memory. Water proof, Dust proof and ESD resistant. Enhanced power cycling support.
