* Images are for reference only. See product specifications (datasheet).
Technical Documentation:
insert_drive_file AQD-SD3L1GN16-SC_DS20180515135655.pdf
Terms and Conditions
| Memory | Manufacturer | Advantech |
| Capacity | 1 GB | |
| Chip Manufacturer | SAMSUNG | |
| Chip Organization | 128M X 16 | |
| Rank | 1 Rank | |
| Interface | 204 pin | |
| Frequency | 1600 Mhz | |
| Voltage | 1.35 V | |
| PCB Height | 1.18" | |
| Feature | Unbuffered | |
| Operating Temperature | 0 ~ 85°C (32 ~ 185°F) |
After placing your order, you will receive an email with a proforma invoice that details the most advantageous shipping cost. With us, you won't pay any hidden fees; we do not incorporate shipping costs into the product price. We will also provide you with an estimated delivery date. By confirming the proforma invoice, you give us the green light to dispatch your order and agree to our delivery terms.
We are proud certified partners of brands like Advantech, Westermo, Elproma, and Korenix. This ensures that you are purchasing quality and verified products directly from a trusted supplier. Visit the link to verify our collaboration directly on the official website.
Our team has extensive experience in designing and implementing large industrial projects. We have already collaborated with significant industrial enterprises, metro systems, and railway transport. If you are planning a larger project or need consultation, we are here for you! Our specialists are happy to assist you and prepare an offer tailored precisely to your needs.
Do you have questions or need quick assistance? Our customer service is ready to respond as quickly as possible and provide you with all the information you need.
We believe in the quality of our products and services. If for any reason you are not satisfied, we are happy to help you find a solution.
Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip DDR3 1600Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.35V power consumption. Samsung original chip.
Advantech 4G SO-DDR3-1600 204Pin 256X8 1.35V Unbuffered Samsung Chip DDR3-1600 SO-DIMM. 204-Pin. 256MX8. Samsung Chip.
(DEL21)4G SO-DDR3-1600 512X8 1.35V MIC DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Micron Chip.
4G SO-DDR3-1600 512X8 1.35V HYX DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Hynix Chip.
Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip DDR3 1600Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.35V power consumption. Samsung original chip.
Advantech 4G SO-DDR3-1600 204Pin 256X8 1.35V Unbuffered Samsung Chip DDR3-1600 SO-DIMM. 204-Pin. 256MX8. Samsung Chip.
(DEL21)4G SO-DDR3-1600 512X8 1.35V MIC DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Micron Chip.
4G SO-DDR3-1600 512X8 1.35V HYX DDR3-1600 SO-DIMM. 204-Pin. 512MX8. Hynix Chip.
