204pin SODIMM DDR3L 1600 2GB 256x16(0-85
Original Samsung/Micron IC chips adapted. Data transfer rate: 1600MHz. Operating Temperature: 0 °C ~ 85 °C. 30u” golden finger and Fixed BOM. Free Intelligent software monitor DRAM real time information.
UDIMM DDR5 4800 8GB 1Gx16 (0-85) Micron
Data Transfer Rate: 4800 MT/s. Capacity : 16GB/32GB. Original Micron/Samsung IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 85°C.
SODIMM DDR5 4800 8GB 1Gx16 (0-95) Micron
Data Transfer Rate: 4800 MT/s. Capacity : 8GB/16GB/32GB. Original Micron/Samsung IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 95°C.
UDIMM DDR5 4800 32GB 2Gx8 (0-85) Micron
Data Transfer Rate: 4800 MT/s. Capacity : 16GB/32GB. Original Micron/Samsung IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 85°C.
UDIMM DDR5 4800 16GB 2Gx8 (0-85) Micron
Data Transfer Rate: 4800 MT/s. Capacity : 16GB/32GB. Original Micron/Samsung IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 85°C.
SODIMM DDR5 4800 32GB 2Gx8 (0-85) Micron
Data Transfer Rate: 4800 MT/s. Capacity : 16GB/32GB. Original Micron/Samsung IC adopted. On-Die ECC function support. Independent Power Management IC build-in. Operating Temperature: 0°C ~ 85°C.
(DEL12)SQRAM 4G 240P DDR3-1333 I-GRD SA
Operating Temperature: -40° C to +85° C. Gold plating on PCB gold finger is 30u". JEDEC standard 1.5 V ± 0.075 V power supply. Max clock Freq: 667 MHz; 1333 Mb/s/Pin. Serial presence detected with 2048-bit EEPROM.
(DEL12)SQRAM 2G 240P DDR3-1333 I-GRD SA
Operating Temperature: -40° C to +85° C. Gold plating on PCB gold finger is 30u". JEDEC standard 1.5 V ± 0.075 V power supply. Max clock Freq: 667 MHz; 1333 Mb/s/Pin. Serial presence detected with 2048-bit EEPROM.
SQRAM 1G SO-DDR3-1333 I-GRD SAM-G
30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
SQRAM 2G SO-DDR2-667 128x8 I-GRD SAM-F
Operating Temperature: -40° C to +85° C. Gold plating on PCB gold finger is 30 u". JEDEC standard 1.8 V ± 0.1 V Power supply. Max clock Freq: 333 MHZ; 667 Mb/s/Pin. Serial presence detected with 2048-bit EEPROM.
SQRAM 1G SO-DDR2-667 128x8 I-GRD SAM-F
Operating Temperature: -40° C to +85° C. Gold plating on PCB gold finger is 30 u". JEDEC standard 1.8 V ± 0.1 V Power supply. Max clock Freq: 333 MHZ; 667 Mb/s/Pin. Serial presence detected with 2048-bit EEPROM.
260pin ECC SODIMM-D4-2666 32G SAM 2Gbx8
260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
Rugged ECC SODIMM DDR4 2666 32GB SAM 2Gx8 , -40-85C
Robust PCB designed with Mounting Hole with Military MIL-810G verified. Extreme Data Transfer rate up to 3200 MT/s. Capacity: up to 32GB. Wide Temperature supported: -40°C ~ 85 °C. Original IC chip (Samsung/Hynix).
204pin SODIMM DDR3L 1600 2GB 256x8(-40-8
Original Samsung/Micron IC chips adapted. Data transfer rate: 1600MHz. Operating Temperature: 0 °C ~ 85 °C. 30u” golden finger and Fixed BOM. Free Intelligent software monitor DRAM real time information.
MEMORY MODULE, 240pin UDIMM ECC D3 1600 8G 512x8 SAM E DIE
Original memory chips (Samsun/Hynix). ECC function support. Fixed BOM . Wide Temperature support (-40~85oc). .
ECC SODIMM DDR4 2666 8GB 1GX8 (0-85)
260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
ECC SODIMM DDR4 2666 8GB 1Gx8 (-40-85) SAM
260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
ECC SODIMM DDR4 2666 16GB 1Gx8 (-40-85) SAM
260pin SODIMM ECC DIMM. Data transfer rate: 2666/3200 MT/s. Capacity: 4/8/16/32GB. Original IC chip (Samsung/Hynix). Wide temperature support -40oC~85oC. ECC function support.
SQRAM 4G SO-DDR3-1600 (-20~85) LOW VOL
Tier one original Samsung chip adopted. Data transfer rate: 1600MT/s. 3yrs longevity & lifetime warranty. Operating Temperature: -20 °C ~ 85 °C. Free Intelligent software monitor DRAM real time information. .
SQRAM 8G SO-DDR3-1600 LOW VOLTAGE I-GRD
30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
SODIMM DDR3L 1866 4GB (-40-85)
Tier one original Samsung chip adopted. Data transfer rate: 1600MT/s. 3yrs longevity & lifetime warranty. Operating Temperature: -20 °C ~ 85 °C. Free Intelligent software monitor DRAM real time information. .
SODIMM DDR3L 1600 4GB 256X16, ISSI-C(-40
30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
SQRAM 4G SO-DDR3-1600 LOW VOLTAGE I-GRD
30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
SQRAM 4G SO-DDR3-1333 I-GRD SAM
30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
SQRAM 2G SO-DDR3-1600 LOW VOLTAGE I-GRD
30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
SODIMM(ECC) DDR4 2133 16GB (-40-85)
260pin SODIMM ECC DIMM. Data transfer rate: 2133/2400/2666 MT/s
Capacity: 2GB~16GB. Original IC chip (Samsung/Hynix)
. ECC function support. Wide temperature range support -40oC~85oC.
ECC SO D4 2400 16GB (-40-85) SAM
260pin SODIMM ECC DIMM. Data transfer rate: 2133/2400/2666 MT/s
Capacity: 2GB~16GB. Original IC chip (Samsung/Hynix)
. ECC function support. Wide temperature range support -40oC~85oC.
SODIMM(ECC) DDR4 2400 16GB 1G*8 (0-85)
260pin SODIMM ECC DIMM. Data transfer rate: 2133/2400/2666 MT/s
Capacity: 2GB~16GB. Original IC chip (Samsung/Hynix)
. ECC function support. Wide temperature range support -40oC~85oC.
Rugged SODIMM DDR4 2666 16GB Hynix 1Gx8, 0-85C
Robust PCB designed with Mounting Hole with Military MIL-810G verified. Extreme Data Transfer rate up to 3200 MT/s. Capacity: up to 32GB. Wide Temperature supported: -40°C ~ 85 °C. Original IC chip (Samsung/Hynix).
SQRAM 2G SO-DDR3-1333 I-GRD SAM
30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
SODIMM DDR3L 1333 2GB 256x8 SAM-F(-40-8
30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
SODIMM DDR3L 1600 2GB I-Grade(-40-85)
30u” golden finger. Operating Temperature: -40° C to +85° C. 100% Screening Test. Original chip vendor adopted. EEPROM with Thermal sensor. Burn-In Test.
SODIMM DDR3L 1600 2GB 256x8(0-85
Original Samsung/Micron IC chips adapted. Data transfer rate: 1600MHz. Operating Temperature: 0 °C ~ 85 °C/ wide temperature -40 °C ~ 85 °C. 30u” golden finger and Fixed BOM. Free Intelligent software monitor DRAM real time information.