16GB DDR4 SODIMM-3200 1GbX8 SAM 16GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. Unbuffered.
€53
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4G SO-DDR4-2666 512MbX8 1.2V SAM DDR4 2666Mhz Unbuffered SO-DIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.
€30
16GB SO-DDR5-4800 2GX8 1.1V SAM Samsung Original Chip. Dual 32-bit Subchannels. Increased Banks and Burst Length. DDR5 4.8GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
€75
8G DDR4-2666 1GbX8 1.2V SAM DDR4 2666Mhz Unbuffered UDIMM. 30μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip.
€35
Advantech 16GB DDR5-5600 288Pin 2GX8 1.1V Unbuffered Hynix Chip Hynix Original Chip. Increased Banks and Burst Length. DDR5 5.6GT/s. Same-Bank Refresh. On-die ECC for Enhanced RAS.
€85
8GB ECC-DDR3-1600 1.35V&1.5V 512X8 SAM DDR3-1600 ECC. 240-Pin. 512MX8. Samsung Chip.
€66
32GB DDR4 SODIMM-3200 2GbX8 SAM 32GB. Speed 3200MHz. 30u" Gold Plating Thickness . Anti-sulfurization resistance. Unbuffered.
€106
16G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. 100% tested for stability, compatibility and performance.
€72
(DEL21)4G DDR3-1600 512X8 1.35V MIC DDR3-1600. 240-Pin. 512MX8. Micron Chip.
€53
4G DDR4-2400 512X16 1.2V HYX DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip.
€26
Micron 64G DDR4 3200 288PIN 16Gbx4 REG Micron DRAM Chip. DDR4. Registered DIMM. Gold edge contacts. 64GB.
€289
32G DDR4-2666 2GbX8 1.2V HYX Increased Bandwidth, up to 2600 Mbps. Industrial Stand 30u Gold Plating. Enhanced Power Efficiency. RoHS compliant & Complies with JEDEC standards. Up to 32GB.
€151
8G R-DDR3-1600 1.35V&1.5V 512X8 SAM DDR3-1600 ECC Registered. 240-Pin. 512MX8. Samsung Chip.
€100
(DEL21)Micron 4GB DDR4 UDIMM 3200Mhz 512 DDR4 3200Mhz Unbuffered DIMM. 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Data bus inversion (DBI) for data bus. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
€34
16G DDR4-2400 1GX8 1.2V SAM DDR4-2400 Unbuffered DIMM. 30μ" gold plating thickness. 1.2V power consumption. Samsung original chip.
€94